Ismo (OH2FTG) recently introduced me to a bunch of Tokmas RF parts. Out of these, the Tokmas CID10N65F GaN FET stood out. It seems to have a lot of potential (for HF + 6m) at a very low price point.
This RF MOSFET part can be purchased from LCSC.
It seems Tokmas CID10N65F has the potential to completely replace the RD16HHF1 part from Mitsubishi Electric!
Datasheet excerpt:
The full datasheet is available here.
This device should be quite competitive even when compared to the RD15HVF1-501 MOSFET!
I am planning to build a couple of projects around this part soon - stay tuned for more!
Updates:
The copper substrate is connected to the source. That is, it can be placed on the radiator right away without an insulating thermal pad. The TO-220F package has an insulating plastic body on all sides. By using a "sharpening bar", the plastic body can be scraped away from below to reach the copper substrate (via http://cqham.ru forum). This modification results in a massive heat dissipation improvement (about 30 degrees).
Here is the 3D render for a PCB I made for testing this part:
Updates (22-April-2025):
With Tokmas CID10N65F, 14V @ drain, 5V to driver we get ~8W on 28MHz and 6W at 50 MHz! It seems we have a winner here. The DUT also stays pretty cool (as compared to the "famous" IRF510) it seems. With 20V @ drain, it easily reaches ~12W at 50 MHz!